ASU, Georgia Tech Create Breakthrough for Solar Cell Efficiency
Friday, October 25, 2013 - 13:30
in Physics & Chemistry
In an article recently published in the journal Applied Physics Letters, Arizona State University researchers, in collaboration with a scientific team led by Professor Alan Doolittle at the Georgia Institute of Technology, have just revealed the fundamental aspect of a new approach to growing InGaN crystals for diodes, which promises to move photovoltaic solar cell technology toward record-breaking efficiencies.