Tension in the nanoworld: Infrared light visualizes nanoscale strain fields

(PhysOrg.com) -- A joint team of researchers at CIC nanoGUNE (San Sebastian, Spain) and the Max Planck Institutes of Biochemistry and Plasma Physics (Munich, Germany) report the non-invasive and nanoscale resolved infrared mapping of strain fields in semiconductors. The method, which is based on near-field microscopy, opens new avenues for analyzing mechanical properties of high-performance materials or for contact-free mapping of local conductivity in strain-engineered electronic devices (Nature Nanotechnology, advanced online publication, 11 Jan. 2009).

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