Toshiba Develops High Performance CMOS Device Technology for 20nm Generation LSI

(PhysOrg.com) -- Toshiba Corporation today announced that it has developed a breakthrough technology for steep channel impurity distribution that delivers a solution to a key problem for 20nm generation CMOS technology. The technology opens the door to a future generation of LSI fabricated with bulk CMOS technology, the mainstream technology in today's LSI, by achieving the world's first practical fabrication process applicable to 20nm generation CMOS devices.

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