Absorbing Hydrogen Fluoride Gas to Enhance Crystal Growth

(PhysOrg.com) -- Two scientists at the U.S. Department of Energy's Brookhaven National Laboratory have developed a method to control the buildup of hydrogen fluoride gas during the growth of precision crystals needed for applications such as superconductors, optical devices, and microelectronics. The invention -- by Vyacheslav Solovyov and Harold Wiesmann and recently awarded U.S. Patent number 7,622,426 -- could lead to more efficient production and improved performance of these materials.

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