Elpida and Spansion develop 4-Gigabit NAND flash memory
Thursday, September 2, 2010 - 14:28
in Physics & Chemistry
Elpida Memory and Spansion today announced they have created the industry's first charge-trapping 1.8 V, 4-gigabit SLC (Single Level Cell) NAND Flash memory. This NAND memory, based on Spansion's MirrorBit charge-trapping technology, is being produced at Elpida's Hiroshima factory. The advanced technical expertise and strong cooperation of the two companies has made it possible to develop and manufacture the world's first charge-trapping NAND Flash memory.