Fujitsu develops GaN HEMT power amplifier featuring world's highest output in millimeter-wave W-Band

Wednesday, October 6, 2010 - 17:10 in Physics & Chemistry

Fujitsu announced the development of a power amplifier using gallium nitride (GaN) High Electron Mobility Transistors (HEMT) that has achieved the world's highest output performance of 1.3W for wireless communications in the millimeter-wave W-band, for which widespread usage is expected in the future. The new amplifier will offer transmission output equivalent to approximately 16 times that of existing amplifiers that use gallium-arsenide (GaAs), thereby enabling W-band transmission ranges to be extended by approximately six times.

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