Samsung readies green memory with advanced chip stacking technology
Wednesday, December 8, 2010 - 13:32
in Mathematics & Economics
Samsung Electronics today announced the development of an eight gigabyte registered dual inline memory module based on its advanced Green DDR3 DRAM. The new memory module, which has just been successfully tested by major Samsung customers, delivers superior performance, in particular because of its use of a three-dimensional (3D) chip stacking technology referred to as 'through silicon via' (TSV).
