Nonvolatile memory based on ferroelectric-graphene field-effect transistors is now a step closer to reality
Thursday, February 24, 2011 - 13:01
in Physics & Chemistry
A fundamental component of a field-effect transistor (FET) is the gate dielectric, which determines the number of charge carriers -- electrons or electron vacancies -- that can be injected into the active channel of the device. Graphene has recently become the focus of attention as a viable, high-performance replacement for silicon in FETs, and in recent studies on graphene-based FETs, scientists have investigated the use of thin films of a ferroelectric material for the gate dielectric.