Mapping deformation in buried semiconductor structures using the hard X-Ray nanoprobe
Friday, May 13, 2011 - 10:01
in Physics & Chemistry
(PhysOrg.com) -- Scientists from IBM's T. J. Watson Research Center and Columbia University, working with the X-Ray Microscopy Group, have mapped rotation and strain fields across a silicon-on-insulator (SOI) structure that included a liner of stressed Si3N4 using X-ray nanodiffraction (nano-XRD) at the CNM/APS Hard X-Ray Nanoprobe beamline.