Radical new Intel transistor based on UC Berkeley's FinFET
Wednesday, May 25, 2011 - 10:30
in Physics & Chemistry
(PhysOrg.com) -- On May 4, 2011, Intel Corporation announced what it called the most radical shift in semiconductor technology in 50 years. A new three-dimensional transistor design will enable the production of integrated-circuit chips that operate faster with less power. Intels 3-D Tri-Gate transistor will be used in 22-nanometer-technology microprocessors slated for high-volume manufacturing by the end of the year.
