NXP introduces eXtremely Rugged XR LDMOS RF power transistors
Thursday, June 9, 2011 - 13:30
in Physics & Chemistry
Designed for the toughest engineering environments, NXP Semiconductors N.V. today unveiled its new XR family of eXtremely Rugged LDMOS RF power transistors. The XR family is designed tough-as-nails to withstand the harsh fault conditions often found in applications such as industrial lasers, metal etching and concrete drilling. Based on NXPs industry-leading LDMOS technology, the XR family extends LDMOS into the few remaining domains that are serviced by VDMOS and bipolar transistors today. NXP will showcase its first XR RF power transistor, the BLF578XR, this week at the IEEE MTT-S International Microwave Symposium 2011 (IMS2011) in Baltimore, Maryland.