Korean researchers report creation of faster, more resilient ReRam
Wednesday, July 20, 2011 - 08:00
in Physics & Chemistry
(PhysOrg.com) -- Korean researchers working out of the Samsung Advanced Institute of Technology report in a paper published in Nature Materials, that they've been able to create a non-volatile Resistance RAM (ReRam) chip capable of withstanding a trillion read/write cycles, all with a switching time of just 10ns (about a million times faster than current flash chips), paving the way for a possible upgrade to flash memory cards.