New etch process developed at the CNST uses argon pulsing to improve silicon etch rate and selectivity

Engineers in the CNST NanoFab have developed a new plasma etching technique for silicon which improves the etch rate, the mask selectivity, and the sidewall profile by optimizing the addition of argon to the process flow.  Small and high aspect ratio silicon structures can now be easily and more rapidly fabricated in the NanoFab using fluorinated plasma chemistry that is inherently isotropic.

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