Fujitsu and SuVolta demonstrate ultra-low-voltage operation of SRAM down to 0.4V
Wednesday, December 7, 2011 - 08:03
in Physics & Chemistry
Fujitsu Semiconductor Limited and SuVolta, Inc. today announced that they have successfully demonstrated ultra-low-voltage operation of SRAM (static random access memory) blocks down to 0.425V by integrating SuVoltas PowerShrink low-power CMOS platform into Fujitsu Semiconductors low-power process technology. By reducing power consumption, these technologies will make possible the ultimate in ecological products in the near future. Technology details and results will be presented at the 2011 International Electron Devices Meeting (IEDM) being held in Washington DC, starting December 5th.