Imec reports smallest fully-functional HfO2-based Resistive RAM cell
Thursday, December 8, 2011 - 06:00
in Physics & Chemistry
At today's 2011 IEEE International Electron Devices Meeting (IEDM), imec presents the worlds smallest, fully-functional HfO2-based Resistive RAM (RRAM) cell, with an area of less than 10x10nm². The new cell shows potential to meet the major requirements for future device-level nonvolatile memory. RRAM is an emerging technology for nonvolatile memory, a candidate to replace NAND Flash technology in the scaling race to sub-10nm memories.