Researchers 'heal' plasma-damaged semiconductor with treatment of hydrogen radicals
Thursday, June 14, 2012 - 04:00
in Physics & Chemistry
Gallium nitride (GaN) is a highly promising material for a wide range of optical and high-power electronic devices, which can be fabricated by dry etching with plasmas. However, the plasma-induced defects and surface residues that remain after such processes tend to degrade the optical and electrical properties of the devices. A team of Japanese researchers has developed and tested a new way to "heal" such defects.