Study of phase change materials could lead to better computer memory

Thursday, June 21, 2012 - 13:31 in Physics & Chemistry

Memory devices for computers require a large collection of components that can switch between two states, which represent the 1's and 0's of binary language. Engineers hope to make next-generation chips with materials that distinguish between these states by physically rearranging their atoms into different phases. Researchers at the University of Pennsylvania have now provided new insight into how this phase change happens, which could help engineers make memory storage devices faster and more efficient.

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