Fujitsu Semiconductor aims to start production of GaN power devices
Thursday, November 8, 2012 - 09:31
in Physics & Chemistry
Fujitsu Semiconductor today announced that it successfully achieved high output power of 2.5kW in server power supply units equipped with gallium-nitride (GaN) power devices built on a silicon substrate. Fujitsu Semiconductor aims to start volume production of the GaN power devices in the second half of 2013. These devices will enable Fujitsu Semiconductor to propose their use in a wide variety of value-enhancing power supply applications, significantly contributing to the realization of a low-carbon society. Fujitsu Semiconductor is aiming to achieve approximately 10 billion yen in sales of GaN power devices in fiscal 2015.