Semiconducting graphene: Fabrication on patterned silicon carbide produces bandgap to advance graphene electronics

Sunday, November 18, 2012 - 13:00 in Physics & Chemistry

By fabricating graphene structures atop nanometer-scale "steps" etched into silicon carbide, researchers have for the first time created a substantial electronic bandgap in the material suitable for room-temperature electronics. Use of nanoscale topography to control the properties of graphene could facilitate fabrication of transistors and other devices, potentially opening the door for developing all-carbon integrated circuits.

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