Taiwan engineers defeat limits of flash memory
Sunday, December 2, 2012 - 05:30
in Physics & Chemistry
(Phys.org)—Taiwan-based Macronix has found a solution for a weakness in flash memory fadeout. A limitation of flash memory is simply that eventually it cannot be used; the more cells in the memory chips are erased, the less useful to store data. The write-erase cycles degrade insulation; eventually the cell fails. "Flash wears out after being programmed and erased about 10,000 times," said the IEEE Spectrum. Engineers at Macronix have a solution that moves flash memory over to a new life. They propose a "self-healing" NAND flash memory solution that can survive over 100 million cycles.