How to overcome the oxide barrier
(Phys.org) —Researchers at Pacific Northwest National Laboratory have uncovered the characteristics of a low-resistance electrical contact to strontium titanate, SrTiO3, an important prototypical oxide semiconductor. Oxides are likely to be important materials in next-generation electronic devices, and they need to be extremely small. Getting electrical signals into and out of oxide semiconductors is hard because a large energy barrier typically develops at the junction with metal contacts. Metal contacts are required to get electricity into and out of a semiconductor device in much the same way that jumper cables are needed to transfer power from a healthy car battery to a dead battery. This work shows how to eliminate this barrier while keeping the contact area extremely small, at the nanometer level.