Next-generation semiconductors synthesis

Although silicon semiconductors are nearly universal in modern electronics, devices made from silicon have limitations—including that they cease to function properly at very high temperatures. One promising alternative are semiconductors made from combinations of aluminum, gallium, and indium with nitrogen to form aluminum nitride (AlN), gallium nitride (GaN), and indium nitride (InN), which are stronger and more stable than their silicon counterparts, function at high temperatures, are piezoelectric (that is, generate voltage under mechanical force), and are transparent to, and can emit, visible light.

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