A new multi-bit 'spin' for MRAM storage

Tuesday, July 22, 2014 - 10:00 in Physics & Chemistry

Interest in magnetic random access memory (MRAM) is escalating, thanks to demand for fast, low-cost, nonvolatile, low-consumption, secure memory devices. MRAM, which relies on manipulating the magnetization of materials for data storage rather than electronic charges, boasts all of these advantages as an emerging technology, but so far it hasn't been able to match flash memory in terms of storage density.

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