A single-sheet graphene p-n junction with two top gates

Researchers in Canada have designed and fabricated a single-sheet graphene p-n junction with two top gates. The standard technique, using a top and a bottom gate, can lead to damaging of the graphene layer. This is avoided in the new method, which also offers linear I-V characteristics at low gate voltage. The two-top-gate structure is expected to be a practical route to a room-temperature terahertz source.

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