Atomically-flat tunnel transistor overcomes fundamental power challenge of electronics

One of the greatest challenges in the evolution of electronics has been to reduce power consumption during transistor switching operation. In a study recently reported in Nature, engineers at University of California, Santa Barbara, in collaboration with Rice University, have demonstrated a new transistor that switches at only 0.1 volts and reduces power dissipation by over 90% compared to state-of-the-art silicon transistors (MOSFETs).

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