Precise electron spin control yields faster memory storage
Data storage devices are not improving as fast as scientists would like. Faster and more compact memory storage devices will become a reality when physicists gain precise control of the spins of electrons. They typically rely on ultra-short lasers to control spins. However, improvement of storage devices via spin control requires first to develop ways of controlling the forces acting on these electronic spins. In a recent study published in EPJ B, John Kay Dewhurst and colleagues, have developed a new theory to predict the complex dynamics of spin procession once a material is subjected to ultra-short laser pulses. The advantage of this approach, which takes into account the effect of internal spin rotation forces, is that it is predictive.