Graphene heterostructures with black phosphorus, arsenic layers enable new infrared detectors
Monday, April 13, 2020 - 12:03
in Physics & Chemistry
MIPT scientists and their colleagues from Japan and the U.S. have calculated the parameters of photodetectors comprised of layers of graphene and a combination of black phosphorus and black arsenic. These sensors are able to detect radiation with energy less than the band gap of the constituent layers without graphene. It is also easy to modify them in order to increase their sensitivity to the required wavelength of light. Such sensors could replace far-infrared and terahertz radiation detectors. The research findings were published in the journal Optics Express.