Magnetic memory states go exponential
Friday, July 10, 2020 - 06:00
in Physics & Chemistry
In a new study, a group of researchers led by Prof. Lior Klein, from the physics department and the Institute of Nanotechnology and Advanced Materials at Bar-Ilan University, has shown that relatively simple structures can support an exponential number of magnetic states—much greater than previously thought. They have additionally demonstrated switching between the states by generating spin currents. Their results may pave the way to multi-level magnetic memory with an extremely large number of states per cell; it could also have application in the development of neuromorphic computing, and more. Their research appears as a featured article on the cover of a June issue of Applied Physics Letters.