A scalable method to create ferroelectric FETs based on AlScN and 2D semiconductors
Monday, June 12, 2023 - 09:03
in Physics & Chemistry
A key objective in the electronics engineering field is to develop transistors and other electronic components that are increasingly compact and efficient, utilizing readily available processes and materials. Among the transistors that have been found to be particularly promising are ferroelectric field effect transistors (FE-FETs), which resemble conventional FETs but also include ferroelectric materials.