NIST 'stress tests' probe nanoscale strains in materials
Wednesday, November 26, 2008 - 03:56
in Physics & Chemistry
Researchers at the National Institute of Standards and Technology (NIST) have demonstrated their ability to measure relatively low levels of stress or strain in regions of a semiconductor device as small as 10 nanometres across. Their recent results not only will impact the design of future generations of integrated circuits but also lay to rest a long-standing disagreement in results between two different methods for measuring stress in semiconductors...