Progress in deep sub-micron scaling for logic and memory

Researchers report promising advances in scaling logic, DRAM and non-volatile memory. A new device based on non-silicon channels was realized to scale high-performance logic towards the sub-20nm node. Moreover, researchers developed low-leakage capacitors allowing DRAM to be pushed to the 2x nm node. And the switching mechanism of resistive RAM for next-generation flash memories (RRAM) has been unraveled.

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