Transistors reinvented using new 3-D structure
Thursday, May 5, 2011 - 09:31
in Physics & Chemistry
Intel Corporation has announced a significant breakthrough in the evolution of the transistor, the microscopic building block of modern electronics. For the first time since the invention of silicon transistors over 50 years ago, transistors using a three-dimensional structure will be put into high-volume manufacturing. Intel will introduce a revolutionary 3-D transistor design called Tri-Gate, first disclosed by Intel in 2002, into high-volume manufacturing at the 22-nanometer (nm) node in an Intel chip codenamed "Ivy Bridge." A nanometer is one-billionth of a meter.