Implant-free quantum-well SiGe pFETs for future high-performance CMOS architectures
Tuesday, July 12, 2011 - 09:30
in Physics & Chemistry
Researchers in Belgium have successfully fabricated implant-free quantum-well (IF-QW) pFETs with an embedded silicon-germanium (SiGe) source/drain. These devices show an excellent short channel control and a record logic performance. A benchmark against various competing technologies showed competitive results. Finally, the device performance was also demonstrated at low operating voltages. These results prove that this device architecture is a viable option for the 16nm technology node and beyond.