50-50 Phase-Change Memory May Be The Future Of Flash

An environmentally-friendly electronic alloy consisting of 50 aluminum atoms bound to 50 atoms of antimony may be promising for building next-generation "phase-change" memory devices, which could be an alternative to slower speed, lower storage density flash memory for data storage applications. Phase-change memory relies on materials that change from a disordered, amorphous structure to a crystalline structure when an electrical pulse is applied. The material has high electrical resistance in its amorphous state and low resistance in its crystalline state -- corresponding to the 1 and 0 states of binary data. read more

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