Putting the Squeeze on an Old Material Could Lead to 'Instant On' Electronic Memory

Low-power, high-efficiency electronic memory could be the long-term result of collaborative research led by Cornell materials scientist Darrell Schlom. The research, to be published April 17 in the journal Science (Vol. 324 No. 5925), involves taking a well-known oxide, strontium titanate, and depositing it on silicon in such a way that the silicon squeezes it into a special state called ferroelectric - a result that could prove key to next-generation memory devices.

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