Silicon-Germanium Chip Sets New Speed Record
Tuesday, February 18, 2014 - 10:31
in Physics & Chemistry
A research team has demonstrated the world's fastest silicon-based device to date. The investigators operated a silicon-germanium (SiGe) transistor at 798 gigahertz (GHz) fMAX, exceeding the previous speed record for silicon-germanium chips by about 200 GHz.
