Silicon-germanium chip sets new speed record
Wednesday, February 19, 2014 - 07:10
in Physics & Chemistry
(Phys.org) —A research collaboration consisting of IHP-Innovations for High Performance Microelectronics in Germany and the Georgia Institute of Technology has demonstrated the world's fastest silicon-based device to date. The investigators operated a silicon-germanium (SiGe) transistor at 798 gigahertz (GHz) fMAX, exceeding the previous speed record for silicon-germanium chips by about 200 GHz.
