Walls falling faster for solid-state memory

After running a series of complex computer simulations, researchers have found that flaws in the structure of magnetic nanoscale wires play an important role in determining the operating speed of novel devices using such nanowires to store and process information. The finding, made by researchers from the National Institute of Standards and Technology, the University of Maryland, and the University of Paris XI, will help to deepen the physical understanding and guide the interpretation of future experiments of these next-generation devices.

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