New technique boosts high-power potential for gallium nitride electronics
Thursday, February 3, 2011 - 12:40
in Physics & Chemistry
Gallium nitride (GaN) material holds promise for emerging high-power devices that are more energy efficient than existing technologies - but these GaN devices traditionally break down when exposed to high voltages. Now researchers at North Carolina State University have solved the problem, introducing a buffer that allows the GaN devices to handle 10 times greater power...