GaN-on-Silicon for scalable high electron mobility transistors
Monday, January 9, 2017 - 13:31
in Physics & Chemistry
Scientists have advanced gallium nitride (GaN)-on-silicon transistor technology by optimizing the composition of the semiconductor layers that make up the device. The team created the high electron mobility transistor (HEMT) structure on a 200 mm silicon substrate with a process that will scale to larger industry-standard wafer sizes.