Better Than SST: Energy-Efficient Computer Memory Uses Voltage Rather Than Current
Sunday, December 16, 2012 - 11:50
in Physics & Chemistry
By using voltage instead of current, researchers say they have made major improvements to magnetoresistive random access memory - MRAM - a faster, higher-capacity class of computer memory. Current, magnetic memory is based on spin-transfer torque (STT), which uses the magnetic property of electrons - spin - in addition to their charge. STT utilizes an electric current to move electrons to write data into the memory. read more