New Nanowire-Based Memory Could Beef Up Information Storage
Wednesday, July 2, 2008 - 10:14
in Physics & Chemistry
Researchers from the University of Pennsylvania have created a type of nanowire-based information storage device that is capable of storing three bit values rather than the usual two—that is, "0," "1," and "2" instead of just "0" and "1." This ability could lead to a new generation of high-capacity information storage for electronic devices.