SanDisk, Toshiba Develop 32-nanometer NAND Flash Technology

SanDisk and Toshiba today announced the co-development of multi-level cell (MLC) NAND flash memory using 32-nanometer process technology to produce a 32-gigabit (Gb) 3-bits-per-cell (X3) memory chip. The breakthrough introduction is expected to quickly bring to market advanced technologies that will enable greater capacities and reduce manufacturing costs for products ranging from memory cards to Solid State Drives (SSD).

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