3-D stress analysis simulator for ultra-small silicon devices revealed
Monday, November 12, 2012 - 09:31
in Physics & Chemistry
National Institute of Advanced Industrial Science and Technology (AIST) researchers have developed a three-dimensional stress analysis simulator for ultra-small silicon (Si) devices. The developed simulation technology allows the analysis of the distribution of the mechanical stress (or mechanical strain) applied to ultra-small Si devices with a spatial resolution at the nanometer level by calculating the modulation of light intensity distribution caused by the device structure in the micro-Raman spectroscopy measurement using an optical microscope.