Engineering thin-film oxide interfaces
Tuesday, November 13, 2012 - 08:31
in Physics & Chemistry
(Phys.org)—Research at the U.S. Department of Energy Office of Science's Advanced Photon Source (APS) provides new insights about a material that might form the basis for an alternative to conventional silicon-based semiconductor technology. The study, published in the journal Advanced Materials, utilized high-energy x-rays from the APS to observe intriguing electrical conductivity at the interface between two oxide insulators and helped resolve the heretofore mysterious origin of conductivity in epitaxially-grown lanthanum aluminate (LaAlO3) and strontium titanate (SrTiO3) thin films.