Growing gallium nitride crystals

Gallium nitride (GaN) is an important material for the semiconductor industry. It features a wide band gap and high thermal conductivity at room temperature, which make it a good material for optoelectronic devices and high-performance radio-frequency microdevices. In the European Journal of Inorganic Chemistry, Rainer Niewa and co-workers at the University of Stuttgart and Ludwig Maximilians University of Munich, Germany, report the existence of ammoniates of gallium halides in the ammonothermal growth of GaN and provide a rigorous characterization of these compounds.

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