Technique makes it possible to measure the intrinsic properties of quantum dot transistors
Friday, December 20, 2013 - 09:00
in Physics & Chemistry
Transistors are one of the most important devices in electronics and lie at the heart of modern computing. The progressive miniaturization of transistors is rapidly approaching the atomic scale, where even the tiniest imperfection can have a significant effect on performance. Keiji Ono and colleagues from the RIKEN Low Temperature Physics Laboratory have now developed a method for measuring the operational characteristics of single-atom 'quantum dot' transistors without the influence of surrounding imperfections.