A new light on significantly faster computer memory devices
Friday, November 30, 2018 - 14:00
in Physics & Chemistry
A team of scientists from Arizona State University's School of Molecular Sciences and Germany have published in Science Advances online today an explanation of how a particular phase-change memory (PCM) material can work one thousand times faster than current flash computer memory, while being significantly more durable with respect to the number of daily read-writes.