Development of a new low-cost gallium nitride (GaN) crystal manufacturing device
Tuesday, December 3, 2019 - 10:30
in Physics & Chemistry
JST announces the successful development of a high-quality bulk GaN growth device based on the THVPE method, a development topic of the Newly extended Technology transfer Program (NexTEP). Development towards commercial applicability was carried out by the Innovation and R&D Division of Taiyo Nippon Sanso from August 2013 to March 2019, based on the research of Professor Akinori Koukitsu of the Tokyo University of Agriculture and Technology. The research team has developed a GaN crystal manufacturing device that achieves high speed, high quality, and continuous growth.