Electronics advance moves closer to a world beyond silicon
Wednesday, September 4, 2013 - 16:30
in Physics & Chemistry
Researchers have made a significant advance in the function of metal-insulator-metal, or MIM diodes, a technology premised on the assumption that the speed of electrons moving through silicon is simply too slow. For the extraordinary speed envisioned in some future electronics applications, these innovative diodes solve problems that would not be possible with silicon-based materials as a limiting factor.